HfO2 Based Resistive Switching Non-Volatile Memory (RRAM) and Its Potential for Embedded Applications
نویسندگان
چکیده
In this letter, HfO2 based RRAM with varying device sizes are discussed with an analysis on their electrical characteristics. Device sizes of 60nm and 120nm were achieved by using different thickness of nitride spacer after 200nm contact hole is formed. Platinum (Pt) bottom electrode and Titanium Nitride (TiN) top electrode were used with HfO2 dielectric as the resistance switching layer. Uniform bipolar switching characteristics with a low Ireset of about 100μA are achieved with self-compliance effect. It is demonstrated that RRAM has a potential to be used as the embedded memory fabricated directly at the backend of CMOS process.
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